▍ Product Overview
Our Voltage Controlled Magnetic Random Access Memory (VC-MRAM), also known as Magnetoelectric RAM (MeRAM™), represents the cutting edge of non-volatile memory technology. Designed to deliver unparalleled performance, endurance, and energy efficiency, our VC-MRAM is the perfect choice for a wide range of high-performance applications.
▍ Key Features
Ultra low energy consumption
At below 10fJ per write operation, VC-MRAM consumes the same order of energy as SRAM while being nonvolatile. Compared to other MRAMs, MeRAM consumes 100x less energy. Compared to commercial eFLASH, MeRAM consumes a million (10⁶) times less energy.
Ultra Low Energy Consumption
Ultra-High Endurance
With endurance above 10¹⁴ cycles, MeRAM is currently the highest endurance nonvolatile memory, on par with SRAM. Compared to other MRAMs, MeRAM offers 1000 times better endurance.Compared to eFlash, MeRAM offers 10⁸x higher endurance.
Ultra-High Endurance
High Density
Due to the low current drive requirements, MeRAM uses logic transistors with minimum size, matching that of eFLASH. Compared to other MRAMs, MeRAM offers 40% better density. Compared to commercial SRAM, MeRAM provides a 3-4 times improvement in density.
High Density
Ultra-High Performance
With sub-nanosecond (<1ns) switching time, MeRAM speed is on par with SRAM and capable of reaching GHz operation frequencies. Compared to other MRAMs, MeRAM offers 10 times faster speed. Compared to commercial eFLASH, MeRAM offers a 1000 times faster speed.
Ultra-High Performance
CMOS Process Compatible
MeRAM integrates seamlessly with existing CMOS manufacturing processes. This enables tightly coupled memory and computing designs, removing the long latency and energy consumption of off-chip access known as the von Neumann bottleneck.
CMOS Process Compatible
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