Development Milestones
2024
Mass-production of 400Mbps TRNG products.
2023
Demonstration of 2Mb VC-MRAM on a 28nm node.
2022
Demonstration of 192Kb field-free VC-MRAM on a 40nm node.
2021
Instontech Founded in Suzhou Industrial Park.
2020
Demonstration of VC-MRAM on 8-inch wafers; TRNG passed NIST Tests.
2018
Demonstration of record VCMA coefficient (>180) in a 4Kb VC-MTJ array.
2016
The design and verification of the peripheral circuits of the 1Mb chip were completed, paving the way for large-scale integration.
2015
Demonstration of a 1Kb VC-MTJ array.
2012
The physics behind Voltage Controlled Magnetic Anisotropy (VCMA) was discovered, backed by $18 million in funding from NSF, DARPA, and numerous other agencies around the world.
Contact address: Room 1706, Zhongxin Ecological Building, No.2 Keying Road, Suzhou Industrial Park