Application
Consumer Electronics
Mobile, Wearables and IoT
In existing chips, standby power consumption is mainly consumed in memory operations. Embedded non-volatile memory (eNVM) provides the possibility of zero-standby, instant on-off operation, significantly extending standby time. In some application scenarios that focus on standby time, the use of MRAM will significantly extend the standby time compared to SRAM and DRAM.
Many companies have already used MRAM for mobile, wearable, and IoT applications. Xiaomi, Huawei, and NXP are some of the early adopters and have adopted MRAM in smartphones, smartwatches, and microcontrollers.
Case Study: NXP MX8MPlus Energy Consumption
NXP MX 8M is an Industrial IoT platform featuring a Cortex®-A53 processor with 512kb L2 cache. Due to higher operating energy consumption (e.g. breakeven time), non-volatile replacement of cache requires a minimum percentage of standby time to be effective. For direct replacement of SRAM with STT-MRAM, this ratio is about 7.1, i.e. for every second of operation, 7.1 seconds of standby time will make the STT-MRAM design more energy efficient. Since the operating energy of our VC-MRAM is very close to that of SRAM, using VC-MRAM will reduce this ratio by more than a factor of three, i.e. if the standby ratio
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